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Microsemi Corporation - JANTXV1N5416US

KEY Part #: K6433303

JANTXV1N5416US Verðlagning (USD) [6017stk lager]

  • 1 pcs$7.61973
  • 109 pcs$7.58182
Hlutanúmer:
JANTXV1N5416US
Framleiðandi:
Microsemi Corporation
Nákvæm lýsing:
DIODE GEN PURP 100V 3A D5B. Diodes - General Purpose, Power, Switching Rectifier
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Díóða - Zener - Stakur, Transistors - Tvíhverfur (BJT) - RF, Díóða - breytileg getu, Transistors - sérstök tilgangur, Smára - tvíhverfa (BJT) - fylki, Thyristors - SCRs - mát and Transistors - FETs, MOSFETs - Single ...
Samkeppnisforskot:
We specialize in Microsemi Corporation JANTXV1N5416US electronic components. JANTXV1N5416US can be shipped within 24 hours after order. If you have any demands for JANTXV1N5416US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTXV1N5416US Vörueiginleikar

Hlutanúmer : JANTXV1N5416US
Framleiðandi : Microsemi Corporation
Lýsing : DIODE GEN PURP 100V 3A D5B
Röð : Military, MIL-PRF-19500/411
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 100V
Núverandi - meðaltal leiðrétt (Io) : 3A
Spenna - Fram (Vf) (Max) @ Ef : 1.5V @ 9A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 150ns
Núverandi - Aftur leki @ Vr : 1µA @ 100V
Capacitance @ Vr, F : -
Festingargerð : Surface Mount
Pakki / mál : SQ-MELF, B
Birgir tæki pakki : D-5B
Rekstrarhiti - mótum : -65°C ~ 175°C

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