[3277stk lager]
- Hlutanúmer:
- IXTD3N60P-2J
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 600.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Díóða - Zener - Fylki, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Díóða - leiðréttingar - stakir, Díóða - RF, Thyristors - TRIACs and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in IXYS IXTD3N60P-2J electronic components. IXTD3N60P-2J can be shipped within 24 hours after order. If you have any demands for IXTD3N60P-2J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD3N60P-2J Vörueiginleikar
Hlutanúmer :
IXTD3N60P-2J
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 600
Röð :
PolarHV™
Hluti staða :
Last Time Buy
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.9 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ kt :
5.5V @ 50µA
Hliðargjald (Qg) (Max) @ Vgs :
9.8nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
411pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
70W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
Die
Pakki / mál :
Die
Nýjustu fréttir
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