[6195stk lager]
- Hlutanúmer:
- HN1B01FU-Y(L,F,T)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- TRANS NPN/PNP 50V 0.15A US6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Díóða - leiðréttingar - fylki, Díóða - RF, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - RF, Thyristors - SCR and Transistors - Tvíhverfur (BJT) - Single ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage HN1B01FU-Y(L,F,T) electronic components. HN1B01FU-Y(L,F,T) can be shipped within 24 hours after order. If you have any demands for HN1B01FU-Y(L,F,T), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN1B01FU-Y(L,F,T) Vörueiginleikar
Hlutanúmer :
HN1B01FU-Y(L,F,T)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
TRANS NPN/PNP 50V 0.15A US6
Röð :
-
Hluti staða :
Active
Transistor Type :
NPN, PNP
Núverandi - Safnari (Ic) (Max) :
150mA
Spenna - sundurliðun útsendara (hámark) :
50V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Núverandi - Úrskurður safnara (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA, 6V
Afl - Max :
200mW
Tíðni - umskipti :
120MHz
Vinnuhitastig :
125°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
6-TSSOP, SC-88, SOT-363
Birgir tæki pakki :
US6
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