[2578stk lager]
- Hlutanúmer:
- V12P10HM3/86A
- Framleiðandi:
- Vishay Semiconductor Diodes Division
- Nákvæm lýsing:
- DIODE SCHOTTKY 100V 12A TO277A.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Tvíhverfur (BJT) - Single, Díóða - RF, Transistors - JFETs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Smára - tvíhverfa (BJT) - fylki and Díóða - Zener - Stakur ...
- Samkeppnisforskot:
- We specialize in Vishay Semiconductor Diodes Division V12P10HM3/86A electronic components. V12P10HM3/86A can be shipped within 24 hours after order. If you have any demands for V12P10HM3/86A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
V12P10HM3/86A Vörueiginleikar
Hlutanúmer :
V12P10HM3/86A
Framleiðandi :
Vishay Semiconductor Diodes Division
Lýsing :
DIODE SCHOTTKY 100V 12A TO277A
Röð :
eSMP®, TMBS®
Hluti staða :
Obsolete
Díóða gerð :
Schottky
Spenna - DC snúningur (Vr) (Max) :
100V
Núverandi - meðaltal leiðrétt (Io) :
12A
Spenna - Fram (Vf) (Max) @ Ef :
700mV @ 12A
Hraði :
Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) :
-
Núverandi - Aftur leki @ Vr :
250µA @ 100V
Capacitance @ Vr, F :
-
Festingargerð :
Surface Mount
Pakki / mál :
TO-277, 3-PowerDFN
Birgir tæki pakki :
TO-277A (SMPC)
Rekstrarhiti - mótum :
-40°C ~ 150°C
Nýjustu fréttir
Þú gætir líka haft áhuga á
-
RJU60C2SDPD-E0#J2
Renesas Electronics America
DIODE GEN PURP 600V 5A TO252. Diodes - General Purpose, Power, Switching Fast Recovery Diode 600V TO-252 IF=8A
-
RJU60C3SDPD-E0#J2
Renesas Electronics America
DIODE GEN PURP 600V 10A TO252. Diodes - General Purpose, Power, Switching FRD 600V/30A/90ns Trr/TO-252
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