Vishay Semiconductor Diodes Division - VS-GT100TP120N

KEY Part #: K6533609

[776stk lager]


    Hlutanúmer:
    VS-GT100TP120N
    Framleiðandi:
    Vishay Semiconductor Diodes Division
    Nákvæm lýsing:
    IGBT 1200V 180A 652W INT-A-PAK.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Díóða - Bríta leiðréttingar, Díóða - Zener - Stakur, Thyristors - SCR, Transistors - FETs, MOSFETs - Single and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
    Samkeppnisforskot:
    We specialize in Vishay Semiconductor Diodes Division VS-GT100TP120N electronic components. VS-GT100TP120N can be shipped within 24 hours after order. If you have any demands for VS-GT100TP120N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VS-GT100TP120N Vörueiginleikar

    Hlutanúmer : VS-GT100TP120N
    Framleiðandi : Vishay Semiconductor Diodes Division
    Lýsing : IGBT 1200V 180A 652W INT-A-PAK
    Röð : -
    Hluti staða : Obsolete
    IGBT gerð : Trench
    Stillingar : Half Bridge
    Spenna - sundurliðun útsendara (hámark) : 1200V
    Núverandi - Safnari (Ic) (Max) : 180A
    Afl - Max : 652W
    Vce (on) (Max) @ Vge, Ic : 2.35V @ 15V, 100A
    Núverandi - Úrskurður safnara (Max) : 5mA
    Inntaksrýmd (Cies) @ Vce : 12.8nF @ 30V
    Inntak : Standard
    NTC Thermistor : No
    Vinnuhitastig : 175°C (TJ)
    Festingargerð : Chassis Mount
    Pakki / mál : INT-A-PAK (3 + 4)
    Birgir tæki pakki : INT-A-PAK

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