BSC028N06NSTATMA1 Verðlagning (USD) [95208stk lager]
- 1 pcs$0.41069
- Hlutanúmer:
- BSC028N06NSTATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- DIFFERENTIATED MOSFETS.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Díóða - RF, Thyristors - SCRs - mát, Díóða - breytileg getu, Díóða - leiðréttingar - stakir, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki and Kerfisstjóratæki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC028N06NSTATMA1 electronic components. BSC028N06NSTATMA1 can be shipped within 24 hours after order. If you have any demands for BSC028N06NSTATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC028N06NSTATMA1 Vörueiginleikar
Hlutanúmer :
BSC028N06NSTATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
DIFFERENTIATED MOSFETS
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
24A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
3.3V @ 50µA
Hliðargjald (Qg) (Max) @ Vgs :
49nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3375pF @ 30V
FET lögun :
-
Dreifing orku (Max) :
3W (Ta), 100W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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