VS-GB200TH120N Verðlagning (USD) [197stk lager]
- 1 pcs$234.46046
- 12 pcs$216.03837
- Hlutanúmer:
- VS-GB200TH120N
- Framleiðandi:
- Vishay Semiconductor Diodes Division
- Nákvæm lýsing:
- IGBT 1200V 360A 1136W INT-A-PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Transistors - FETs, MOSFETs - RF, Transistors - sérstök tilgangur, Smára - tvíhverfa (BJT) - fylki, Díóða - breytileg getu, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Vishay Semiconductor Diodes Division VS-GB200TH120N electronic components. VS-GB200TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB200TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB200TH120N Vörueiginleikar
Hlutanúmer :
VS-GB200TH120N
Framleiðandi :
Vishay Semiconductor Diodes Division
Lýsing :
IGBT 1200V 360A 1136W INT-A-PAK
Röð :
-
Hluti staða :
Active
IGBT gerð :
-
Stillingar :
Half Bridge
Spenna - sundurliðun útsendara (hámark) :
1200V
Núverandi - Safnari (Ic) (Max) :
360A
Afl - Max :
1136W
Vce (on) (Max) @ Vge, Ic :
2.35V @ 15V, 200A
Núverandi - Úrskurður safnara (Max) :
5mA
Inntaksrýmd (Cies) @ Vce :
14.9nF @ 25V
Inntak :
Standard
NTC Thermistor :
No
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Chassis Mount
Pakki / mál :
Double INT-A-PAK (3 + 4)
Birgir tæki pakki :
Double INT-A-PAK
Nýjustu fréttir
Þú gætir líka haft áhuga á
-
VS-ETL015Y120H
Vishay Semiconductor Diodes Division
IGBT 1200V 22A 89W EMIPAK-2B. Rectifiers 15A Dbl Interleaved Boost Converter
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