Ef staðsetning þín er ekki skráð skaltu velja eitt af eftirfarandi:

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Ef staðsetning þín er ekki skráð skaltu velja eitt af eftirfarandi:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. DBB08G-TM-E

ON Semiconductor - DBB08G-TM-E

KEY Part #: K6541449

[12372stk lager]

    Hlutanúmer:
    DBB08G-TM-E
    Framleiðandi:
    ON Semiconductor
    Nákvæm lýsing:
    BRIDGE RECT 1P 600V 800MA 4SMD.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Single, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - RF and Díóða - Zener - Stakur ...
    Samkeppnisforskot:
    We specialize in ON Semiconductor DBB08G-TM-E electronic components. DBB08G-TM-E can be shipped within 24 hours after order. If you have any demands for DBB08G-TM-E, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    DBB08G-TM-E Vörueiginleikar

    Hlutanúmer : DBB08G-TM-E
    Framleiðandi : ON Semiconductor
    Lýsing : BRIDGE RECT 1P 600V 800MA 4SMD
    Röð : -
    Hluti staða : Obsolete
    Díóða gerð : Single Phase
    Tækni : Standard
    Spenna - toppur öfugur (hámark) : 600V
    Núverandi - meðaltal leiðrétt (Io) : 800mA
    Spenna - Fram (Vf) (Max) @ Ef : 1.05V @ 400mA
    Núverandi - Aftur leki @ Vr : 10µA @ 600V
    Vinnuhitastig : 150°C (TJ)
    Festingargerð : Surface Mount
    Pakki / mál : 4-SMD, Gull Wing
    Birgir tæki pakki : 4-SMD

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    ON Semiconductor NCP1096 High Power PoE-PD w/ Internal Hot Swap FET
    ON Semiconductor NVMFD6H852NL 80V 25A Automotive Power MOSFET
    ON Semiconductor FDMS4D5N08LC 80V Single N-Channel Power MOSFET
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