[1273stk lager]
- Hlutanúmer:
- IRF8113GTRPBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 30V 17.2A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Smára - tvíhverfa (BJT) - fylki, forspeglast, Smára - tvíhverfa (BJT) - fylki, Díóða - Bríta leiðréttingar, Díóða - Zener - Stakur, Transistors - sérstök tilgangur, Díóða - breytileg getu and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF8113GTRPBF electronic components. IRF8113GTRPBF can be shipped within 24 hours after order. If you have any demands for IRF8113GTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8113GTRPBF Vörueiginleikar
Hlutanúmer :
IRF8113GTRPBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 30V 17.2A 8-SOIC
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
17.2A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.6 mOhm @ 17.2A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
36nC @ 4.5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2910pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
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