BAS116E6327HTSA1 Verðlagning (USD) [2455275stk lager]
- 1 pcs$0.01506
- 3,000 pcs$0.01472
- 6,000 pcs$0.01328
- 15,000 pcs$0.01154
- 30,000 pcs$0.01039
- 75,000 pcs$0.00923
- 150,000 pcs$0.00770
- Hlutanúmer:
- BAS116E6327HTSA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Díóða - Zener - Stakur, Thyristors - SCRs - mát, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Transistors - sérstök tilgangur, Díóða - leiðréttingar - stakir and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BAS116E6327HTSA1 electronic components. BAS116E6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BAS116E6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS116E6327HTSA1 Vörueiginleikar
Hlutanúmer :
BAS116E6327HTSA1
Framleiðandi :
Infineon Technologies
Lýsing :
DIODE GEN PURP 80V 250MA SOT23-3
Röð :
-
Hluti staða :
Last Time Buy
Díóða gerð :
Standard
Spenna - DC snúningur (Vr) (Max) :
80V
Núverandi - meðaltal leiðrétt (Io) :
250mA (DC)
Spenna - Fram (Vf) (Max) @ Ef :
1.25V @ 150mA
Hraði :
Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) :
1.5µs
Núverandi - Aftur leki @ Vr :
5nA @ 75V
Capacitance @ Vr, F :
2pF @ 0V, 1MHz
Festingargerð :
Surface Mount
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
Birgir tæki pakki :
SOT-23-3
Rekstrarhiti - mótum :
150°C (Max)
Nýjustu fréttir
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BAS116E6327HTSA1
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DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
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