[4664stk lager]
- Hlutanúmer:
- SQJ962EP-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 60V 8A 8SO.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Díóða - Bríta leiðréttingar, Transistors - IGBTs - Arrays, Kerfisstjóratæki, Díóða - RF and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQJ962EP-T1-GE3 electronic components. SQJ962EP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SQJ962EP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ962EP-T1-GE3 Vörueiginleikar
Hlutanúmer :
SQJ962EP-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 60V 8A 8SO
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
60 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
14nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
475pF @ 25V
Afl - Max :
25W
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® SO-8 Dual
Birgir tæki pakki :
PowerPAK® SO-8 Dual
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