SQS840EN-T1_GE3 Verðlagning (USD) [243379stk lager]
- 1 pcs$0.15197
- 3,000 pcs$0.12869
- Hlutanúmer:
- SQS840EN-T1_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 40V 16A TO263.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Kerfisstjóratæki, Transistors - sérstök tilgangur, Transistors - IGBTs - mát, Díóða - leiðréttingar - fylki, Díóða - leiðréttingar - stakir, Transistors - Forritanleg sameining and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQS840EN-T1_GE3 electronic components. SQS840EN-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS840EN-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS840EN-T1_GE3 Vörueiginleikar
Hlutanúmer :
SQS840EN-T1_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 40V 16A TO263
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
20 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
22.5nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1031pF @ 20V
FET lögun :
-
Dreifing orku (Max) :
33W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8
Pakki / mál :
PowerPAK® 1212-8
Nýjustu fréttir
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