Vishay Siliconix - SIHB12N50C-E3

KEY Part #: K6393110

SIHB12N50C-E3 Verðlagning (USD) [30170stk lager]

  • 1 pcs$1.36599
  • 1,000 pcs$1.28270

Hlutanúmer:
SIHB12N50C-E3
Framleiðandi:
Vishay Siliconix
Nákvæm lýsing:
MOSFET N-CH 500V 12A D2PAK.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Eitt ár
Flís frá:
Hong Kong
RoHS:
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Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Forritanleg sameining, Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - RF and Díóða - leiðréttingar - stakir ...
Samkeppnisforskot:
We specialize in Vishay Siliconix SIHB12N50C-E3 electronic components. SIHB12N50C-E3 can be shipped within 24 hours after order. If you have any demands for SIHB12N50C-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHB12N50C-E3 Vörueiginleikar

Hlutanúmer : SIHB12N50C-E3
Framleiðandi : Vishay Siliconix
Lýsing : MOSFET N-CH 500V 12A D2PAK
Röð : -
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 500V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 12A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 555 mOhm @ 4A, 10V
Vgs (th) (Max) @ kt : 5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 48nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 1375pF @ 25V
FET lögun : -
Dreifing orku (Max) : 208W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D²PAK (TO-263)
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB