ON Semiconductor - DTC123JET1G

KEY Part #: K6528354

DTC123JET1G Verðlagning (USD) [3306981stk lager]

  • 1 pcs$0.01118
  • 3,000 pcs$0.01027
  • 6,000 pcs$0.00927
  • 15,000 pcs$0.00806
  • 30,000 pcs$0.00725
  • 75,000 pcs$0.00645
  • 150,000 pcs$0.00537

Hlutanúmer:
DTC123JET1G
Framleiðandi:
ON Semiconductor
Nákvæm lýsing:
TRANS PREBIAS NPN 200MW SC75.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Thyristors - SCR, Díóða - leiðréttingar - fylki, Díóða - breytileg getu, Transistors - IGBTs - Arrays, Transistors - IGBTs - mát, Thyristors - SCRs - mát and Díóða - leiðréttingar - stakir ...
Samkeppnisforskot:
We specialize in ON Semiconductor DTC123JET1G electronic components. DTC123JET1G can be shipped within 24 hours after order. If you have any demands for DTC123JET1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DTC123JET1G Vörueiginleikar

Hlutanúmer : DTC123JET1G
Framleiðandi : ON Semiconductor
Lýsing : TRANS PREBIAS NPN 200MW SC75
Röð : -
Hluti staða : Active
Transistor Type : NPN - Pre-Biased
Núverandi - Safnari (Ic) (Max) : 100mA
Spenna - sundurliðun útsendara (hámark) : 50V
Viðnám - stöð (R1) : 2.2 kOhms
Viðnám - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
Núverandi - Úrskurður safnara (Max) : 500nA
Tíðni - umskipti : -
Afl - Max : 200mW
Festingargerð : Surface Mount
Pakki / mál : SC-75, SOT-416
Birgir tæki pakki : SC-75

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