Toshiba Semiconductor and Storage - RN2610(TE85L,F)

KEY Part #: K6529140

RN2610(TE85L,F) Verðlagning (USD) [1060332stk lager]

  • 1 pcs$0.03488

Hlutanúmer:
RN2610(TE85L,F)
Framleiðandi:
Toshiba Semiconductor and Storage
Nákvæm lýsing:
TRANS 2PNP PREBIAS 0.3W SM6.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Díóða - breytileg getu, Díóða - Zener - Stakur, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - TRIACs, Transistors - IGBTs - Single, Díóða - RF and Transistors - FETs, MOSFETs - Arrays ...
Samkeppnisforskot:
We specialize in Toshiba Semiconductor and Storage RN2610(TE85L,F) electronic components. RN2610(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2610(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2610(TE85L,F) Vörueiginleikar

Hlutanúmer : RN2610(TE85L,F)
Framleiðandi : Toshiba Semiconductor and Storage
Lýsing : TRANS 2PNP PREBIAS 0.3W SM6
Röð : -
Hluti staða : Active
Transistor Type : 2 PNP - Pre-Biased (Dual)
Núverandi - Safnari (Ic) (Max) : 100mA
Spenna - sundurliðun útsendara (hámark) : 50V
Viðnám - stöð (R1) : 4.7 kOhms
Viðnám - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Núverandi - Úrskurður safnara (Max) : 100nA (ICBO)
Tíðni - umskipti : 200MHz
Afl - Max : 300mW
Festingargerð : Surface Mount
Pakki / mál : SC-74, SOT-457
Birgir tæki pakki : SM6

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