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- Hlutanúmer:
- SIE820DF-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V 50A POLARPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Transistors - IGBTs - mát, Transistors - sérstök tilgangur, Díóða - leiðréttingar - stakir, Díóða - breytileg getu, Transistors - IGBTs - Arrays, Smára - tvíhverfa (BJT) - fylki and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIE820DF-T1-GE3 electronic components. SIE820DF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIE820DF-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIE820DF-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIE820DF-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V 50A POLARPAK
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
50A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
3.5 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
143nC @ 10V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
4300pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
5.2W (Ta), 104W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
10-PolarPAK® (S)
Pakki / mál :
10-PolarPAK® (S)
Nýjustu fréttir
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