Vishay Semiconductor Diodes Division - FESB16JT-E3/45

KEY Part #: K6443484

FESB16JT-E3/45 Verðlagning (USD) [51104stk lager]

  • 1 pcs$0.76512
  • 1,000 pcs$0.34684

Hlutanúmer:
FESB16JT-E3/45
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 600V 16A TO263AB.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Díóða - Zener - Fylki, Transistors - sérstök tilgangur, Kerfisstjóratæki, Transistors - IGBTs - mát, Díóða - Zener - Stakur, Transistors - IGBTs - Single and Smára - tvíhverfa (BJT) - fylki ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division FESB16JT-E3/45 electronic components. FESB16JT-E3/45 can be shipped within 24 hours after order. If you have any demands for FESB16JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB16JT-E3/45 Vörueiginleikar

Hlutanúmer : FESB16JT-E3/45
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 600V 16A TO263AB
Röð : -
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 600V
Núverandi - meðaltal leiðrétt (Io) : 16A
Spenna - Fram (Vf) (Max) @ Ef : 1.5V @ 16A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 50ns
Núverandi - Aftur leki @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 145pF @ 4V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki : TO-263AB
Rekstrarhiti - mótum : -65°C ~ 150°C

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