IGB01N120H2ATMA1 Verðlagning (USD) [119020stk lager]
- 1 pcs$0.31077
- 1,000 pcs$0.28841
- Hlutanúmer:
- IGB01N120H2ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- IGBT 1200V 3.2A 28W TO263-3-2.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Arrays, Transistors - JFETs, Díóða - RF, Díóða - Zener - Stakur, Thyristors - SCRs - mát, Transistors - FETs, MOSFETs - RF and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IGB01N120H2ATMA1 electronic components. IGB01N120H2ATMA1 can be shipped within 24 hours after order. If you have any demands for IGB01N120H2ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGB01N120H2ATMA1 Vörueiginleikar
Hlutanúmer :
IGB01N120H2ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
IGBT 1200V 3.2A 28W TO263-3-2
Röð :
-
Hluti staða :
Not For New Designs
IGBT gerð :
-
Spenna - sundurliðun útsendara (hámark) :
1200V
Núverandi - Safnari (Ic) (Max) :
3.2A
Núverandi - Safnari púlsaður (Icm) :
3.5A
Vce (on) (Max) @ Vge, Ic :
2.8V @ 15V, 1A
Afl - Max :
28W
Skiptir um orku :
140µJ
Gerð innsláttar :
Standard
Hliðargjald :
8.6nC
Td (kveikt / slökkt) @ 25 ° C :
13ns/370ns
Próf ástand :
800V, 1A, 241 Ohm, 15V
Afturheimtur bata (trr) :
-
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki :
PG-TO263-3-2
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