[153stk lager]
- Hlutanúmer:
- IPP12CNE8N G
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 85V 67A TO-220.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki, Kerfisstjóratæki, Díóða - breytileg getu, Smára - tvíhverfa (BJT) - fylki and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPP12CNE8N G electronic components. IPP12CNE8N G can be shipped within 24 hours after order. If you have any demands for IPP12CNE8N G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP12CNE8N G Vörueiginleikar
Hlutanúmer :
IPP12CNE8N G
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 85V 67A TO-220
Röð :
OptiMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
85V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
67A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
12.9 mOhm @ 67A, 10V
Vgs (th) (Max) @ kt :
4V @ 83µA
Hliðargjald (Qg) (Max) @ Vgs :
64nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4340pF @ 40V
FET lögun :
-
Dreifing orku (Max) :
125W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
PG-TO220-3
Pakki / mál :
TO-220-3
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