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  5. K4UHE3D4AA-GUCL

Samsung Semiconductor - K4UHE3D4AA-GUCL

KEY Part #: K7359755

[25313stk lager]

    Hlutanúmer:
    K4UHE3D4AA-GUCL
    Framleiðandi:
    Samsung Semiconductor
    Nákvæm lýsing:
    24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: GDDR6, LPDDR4, DDR4, SLC Nand, LPDDR4X, LPDDR5, HBM Flarebolt and MODULE ...
    Samkeppnisforskot:
    We specialize in Samsung Semiconductor K4UHE3D4AA-GUCL electronic components. K4UHE3D4AA-GUCL can be shipped within 24 hours after order. If you have any demands for K4UHE3D4AA-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4UHE3D4AA-GUCL Vörueiginleikar

    Hlutanúmer : K4UHE3D4AA-GUCL
    Framleiðandi : Samsung Semiconductor
    Lýsing : 24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production
    Röð : DDR3
    Density : 24 Gb
    Org. : x32
    hraði : 4266 Mbps
    Spenna : 1.8 / 1.1 / 0.6 V
    Temp. : -40 ~ 125 °C
    pakki : 200FBGA
    vara Status : Mass Production

    Nýjustu fréttir

    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    How Will 5G Impact on Memory?
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Autonomous Driving and the Quest for Safety
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
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