BSC098N10NS5ATMA1 Verðlagning (USD) [146112stk lager]
- 1 pcs$0.25314
- 5,000 pcs$0.24302
- Hlutanúmer:
- BSC098N10NS5ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 60A 8TDSON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Transistors - JFETs, Smára - tvíhverfa (BJT) - fylki, Transistors - IGBTs - Single, Díóða - leiðréttingar - stakir, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - RF and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC098N10NS5ATMA1 electronic components. BSC098N10NS5ATMA1 can be shipped within 24 hours after order. If you have any demands for BSC098N10NS5ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC098N10NS5ATMA1 Vörueiginleikar
Hlutanúmer :
BSC098N10NS5ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 60A 8TDSON
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
60A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
9.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ kt :
3.8V @ 36µA
Hliðargjald (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2100pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta), 69W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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