SIS892DN-T1-GE3 Verðlagning (USD) [123967stk lager]
- 1 pcs$0.29837
- 3,000 pcs$0.28017
- Hlutanúmer:
- SIS892DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 100V 30A 1212-8 PPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Díóða - Zener - Fylki, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - RF and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIS892DN-T1-GE3 electronic components. SIS892DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS892DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS892DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIS892DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 100V 30A 1212-8 PPAK
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
30A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
29 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
21.5nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
611pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
3.7W (Ta), 52W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8
Pakki / mál :
PowerPAK® 1212-8
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