Vishay Semiconductor Diodes Division - UGB8JT-E3/45

KEY Part #: K6456477

UGB8JT-E3/45 Verðlagning (USD) [120478stk lager]

  • 1 pcs$0.30701
  • 1,000 pcs$0.27950

Hlutanúmer:
UGB8JT-E3/45
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 600V 8A TO263AB. Rectifiers 600 Volt 8.0A 25ns 100 Amp IFSM
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Transistors - IGBTs - Arrays, Díóða - leiðréttingar - stakir, Transistors - IGBTs - mát, Kerfisstjóratæki, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - mát and Transistors - IGBTs - Single ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division UGB8JT-E3/45 electronic components. UGB8JT-E3/45 can be shipped within 24 hours after order. If you have any demands for UGB8JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UGB8JT-E3/45 Vörueiginleikar

Hlutanúmer : UGB8JT-E3/45
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 600V 8A TO263AB
Röð : -
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 600V
Núverandi - meðaltal leiðrétt (Io) : 8A
Spenna - Fram (Vf) (Max) @ Ef : 1.75V @ 8A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 50ns
Núverandi - Aftur leki @ Vr : 30µA @ 600V
Capacitance @ Vr, F : -
Festingargerð : Surface Mount
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki : TO-263AB
Rekstrarhiti - mótum : -55°C ~ 150°C

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