SI8810EDB-T2-E1 Verðlagning (USD) [644086stk lager]
- 1 pcs$0.05771
- 3,000 pcs$0.05743
- Hlutanúmer:
- SI8810EDB-T2-E1
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V 2.1A MICROFOOT.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Arrays and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI8810EDB-T2-E1 electronic components. SI8810EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8810EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8810EDB-T2-E1 Vörueiginleikar
Hlutanúmer :
SI8810EDB-T2-E1
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V 2.1A MICROFOOT
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
-
Drifspenna (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
72 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ kt :
900mV @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
8nC @ 8V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
245pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
500mW (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
4-Microfoot
Pakki / mál :
4-XFBGA
Nýjustu fréttir
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