HN4B01JE(TE85L,F) Verðlagning (USD) [1309823stk lager]
- 1 pcs$0.02824
- Hlutanúmer:
- HN4B01JE(TE85L,F)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- TRANS NPN/PNP 50V 0.15A ESV PLN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Thyristors - TRIACs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - RF, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage HN4B01JE(TE85L,F) electronic components. HN4B01JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN4B01JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN4B01JE(TE85L,F) Vörueiginleikar
Hlutanúmer :
HN4B01JE(TE85L,F)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
TRANS NPN/PNP 50V 0.15A ESV PLN
Röð :
-
Hluti staða :
Active
Transistor Type :
NPN, PNP (Emitter Coupled)
Núverandi - Safnari (Ic) (Max) :
150mA
Spenna - sundurliðun útsendara (hámark) :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Núverandi - Úrskurður safnara (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 10MA, 100MA
Afl - Max :
100mW
Tíðni - umskipti :
80MHz
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
SOT-553
Birgir tæki pakki :
ESV
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