[3910stk lager]
- Hlutanúmer:
- SIB911DK-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2P-CH 20V 2.6A SC75-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Thyristors - SCR, Transistors - FETs, MOSFETs - Arrays, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - RF, Transistors - Tvíhverfur (BJT) - Single, Transistors - Forritanleg sameining and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIB911DK-T1-GE3 electronic components. SIB911DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB911DK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB911DK-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIB911DK-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2P-CH 20V 2.6A SC75-6
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
2 P-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2.6A
Rds On (Max) @ Id, Vgs :
295 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
4nC @ 8V
Inntaksrýmd (Ciss) (Max) @ Vds :
115pF @ 10V
Afl - Max :
3.1W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® SC-75-6L Dual
Birgir tæki pakki :
PowerPAK® SC-75-6L Dual
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