Infineon Technologies - IPB120N10S405ATMA1

KEY Part #: K6418405

IPB120N10S405ATMA1 Verðlagning (USD) [62237stk lager]

  • 1 pcs$0.62826
  • 1,000 pcs$0.57644

Hlutanúmer:
IPB120N10S405ATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH TO263-3.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
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Samkeppnisforskot:
We specialize in Infineon Technologies IPB120N10S405ATMA1 electronic components. IPB120N10S405ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB120N10S405ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB120N10S405ATMA1 Vörueiginleikar

Hlutanúmer : IPB120N10S405ATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH TO263-3
Röð : Automotive, AEC-Q101, OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 120A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt : 3.5V @ 120µA
Hliðargjald (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 6540pF @ 25V
FET lögun : -
Dreifing orku (Max) : 190W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D²PAK (TO-263AB)
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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