Toshiba Semiconductor and Storage - TPN4R303NL,L1Q

KEY Part #: K6416406

TPN4R303NL,L1Q Verðlagning (USD) [247410stk lager]

  • 1 pcs$0.15701
  • 5,000 pcs$0.15623

Hlutanúmer:
TPN4R303NL,L1Q
Framleiðandi:
Toshiba Semiconductor and Storage
Nákvæm lýsing:
MOSFET N-CH 30V 63A 8TSON.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Eitt ár
Flís frá:
Hong Kong
RoHS:
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Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - Arrays, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - Single, Díóða - leiðréttingar - fylki and Transistors - Tvíhverfur (BJT) - Single ...
Samkeppnisforskot:
We specialize in Toshiba Semiconductor and Storage TPN4R303NL,L1Q electronic components. TPN4R303NL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R303NL,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPN4R303NL,L1Q Vörueiginleikar

Hlutanúmer : TPN4R303NL,L1Q
Framleiðandi : Toshiba Semiconductor and Storage
Lýsing : MOSFET N-CH 30V 63A 8TSON
Röð : U-MOSVIII-H
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 40A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt : 2.3V @ 200µA
Hliðargjald (Qg) (Max) @ Vgs : 14.8nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 1400pF @ 15V
FET lögun : -
Dreifing orku (Max) : 700mW (Ta), 34W (Tc)
Vinnuhitastig : 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : 8-TSON Advance (3.3x3.3)
Pakki / mál : 8-PowerVDFN