[12706stk lager]
- Hlutanúmer:
- IRFSL59N10D
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 59A TO-262.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - Single, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Single, Thyristors - SCRs - mát and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFSL59N10D electronic components. IRFSL59N10D can be shipped within 24 hours after order. If you have any demands for IRFSL59N10D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFSL59N10D Vörueiginleikar
Hlutanúmer :
IRFSL59N10D
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 59A TO-262
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
59A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 35.4A, 10V
Vgs (th) (Max) @ kt :
5.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
114nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
2450pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
3.8W (Ta), 200W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-262
Pakki / mál :
TO-262-3 Long Leads, I²Pak, TO-262AA
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