[2496stk lager]
- Hlutanúmer:
- SI4752DY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 30V 25A 8-SO.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - mát, Transistors - IGBTs - Arrays, Díóða - Zener - Fylki, Díóða - Zener - Stakur and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4752DY-T1-GE3 electronic components. SI4752DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4752DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4752DY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI4752DY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 30V 25A 8-SO
Röð :
SkyFET®, TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
25A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
43nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1700pF @ 15V
FET lögun :
Schottky Diode (Body)
Dreifing orku (Max) :
3W (Ta), 6.25W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Nýjustu fréttir
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