Taiwan Semiconductor Corporation - HERF1008GAHC0G

KEY Part #: K6445851

HERF1008GAHC0G Verðlagning (USD) [90796stk lager]

  • 1 pcs$0.43064

Hlutanúmer:
HERF1008GAHC0G
Framleiðandi:
Taiwan Semiconductor Corporation
Nákvæm lýsing:
DIODE HIGH EFFICIENT. Rectifiers 10A,1000V, G.P. HIGH EFFICIENT DUAL RECTIFIER, ISOLATED
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Díóða - Bríta leiðréttingar, Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Single and Transistors - FETs, MOSFETs - RF ...
Samkeppnisforskot:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HERF1008GAHC0G Vörueiginleikar

Hlutanúmer : HERF1008GAHC0G
Framleiðandi : Taiwan Semiconductor Corporation
Lýsing : DIODE HIGH EFFICIENT
Röð : Automotive, AEC-Q101
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 1000V
Núverandi - meðaltal leiðrétt (Io) : 10A
Spenna - Fram (Vf) (Max) @ Ef : 1.7V @ 5A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 80ns
Núverandi - Aftur leki @ Vr : 10µA @ 1000V
Capacitance @ Vr, F : 40pF @ 4V, 1MHz
Festingargerð : Through Hole
Pakki / mál : TO-220-3 Full Pack, Isolated Tab
Birgir tæki pakki : ITO-220AB
Rekstrarhiti - mótum : -55°C ~ 150°C

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