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Ef staðsetning þín er ekki skráð skaltu velja eitt af eftirfarandi:

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  5. CDBJSC101200-G

Comchip Technology - CDBJSC101200-G

KEY Part #: K6430876

CDBJSC101200-G Verðlagning (USD) [13054stk lager]

  • 1 pcs$3.15720
Hlutanúmer:
CDBJSC101200-G
Framleiðandi:
Comchip Technology
Nákvæm lýsing:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 10A 1200V
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - mát, Díóða - Zener - Stakur, Thyristors - SCRs - mát and Díóða - RF ...
Samkeppnisforskot:
We specialize in Comchip Technology CDBJSC101200-G electronic components. CDBJSC101200-G can be shipped within 24 hours after order. If you have any demands for CDBJSC101200-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBJSC101200-G Vörueiginleikar

Hlutanúmer : CDBJSC101200-G
Framleiðandi : Comchip Technology
Lýsing : DIODE SILICON CARBIDE POWER SCHO
Röð : -
Hluti staða : Active
Díóða gerð : Silicon Carbide Schottky
Spenna - DC snúningur (Vr) (Max) : 1200V
Núverandi - meðaltal leiðrétt (Io) : 10A (DC)
Spenna - Fram (Vf) (Max) @ Ef : 1.7V @ 10A
Hraði : No Recovery Time > 500mA (Io)
Afturheimtur bata (trr) : 0ns
Núverandi - Aftur leki @ Vr : 100µA @ 1200V
Capacitance @ Vr, F : 780pF @ 0V, 1MHz
Festingargerð : Through Hole
Pakki / mál : TO-220-2
Birgir tæki pakki : TO-220-2
Rekstrarhiti - mótum : -55°C ~ 175°C

Nýjustu fréttir

Comchip Technology CGRTS General Purpose Rectifiers
Comchip Technology ACZRT55C-G Automotive Zener Diodes
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