Infineon Technologies - IPG20N10S4L35AATMA1

KEY Part #: K6525305

IPG20N10S4L35AATMA1 Verðlagning (USD) [182536stk lager]

  • 1 pcs$0.20263
  • 5,000 pcs$0.18591

Hlutanúmer:
IPG20N10S4L35AATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET 2N-CH 8TDSON.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Thyristors - DIACs, SIDACs, Díóða - leiðréttingar - fylki, Transistors - IGBTs - Arrays, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Single, Transistors - Forritanleg sameining and Thyristors - TRIACs ...
Samkeppnisforskot:
We specialize in Infineon Technologies IPG20N10S4L35AATMA1 electronic components. IPG20N10S4L35AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N10S4L35AATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPG20N10S4L35AATMA1 Vörueiginleikar

Hlutanúmer : IPG20N10S4L35AATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET 2N-CH 8TDSON
Röð : Automotive, AEC-Q101, OptiMOS™
Hluti staða : Active
FET gerð : 2 N-Channel (Dual)
FET lögun : Logic Level Gate
Afrennsli að uppspennu (Vdss) : 100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 20A
Rds On (Max) @ Id, Vgs : 35 mOhm @ 17A, 10V
Vgs (th) (Max) @ kt : 2.1V @ 16µA
Hliðargjald (Qg) (Max) @ Vgs : 17.4nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds : 1105pF @ 25V
Afl - Max : 43W
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Pakki / mál : 8-PowerVDFN
Birgir tæki pakki : PG-TDSON-8-10