Microsemi Corporation - 1N5814

KEY Part #: K6445532

Fjölskylduflokkar:: KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Díóða - leiðréttingar - stakir, Díóða - Zener - Stakur, Thyristors - SCR, Díóða - leiðréttingar - fylki, Díóða - Zener - Fylki, Transistors - FETs, MOSFETs - RF and Transistors - Forritanleg sameining ...

Samkeppnisforskot:: We specialize in Microsemi Corporation 1N5814 electronic components. 1N5814 can be shipped within 24 hours after order. If you have any demands for 1N5814, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

Hlutanúmer : 1N5814

Framleiðandi : Microsemi Corporation

Lýsing : DIODE GEN PURP 100V 20A DO203AA

Röð : -

Hluti staða : Active

Díóða gerð : Standard

Spenna - DC snúningur (Vr) (Max) : 100V

Núverandi - meðaltal leiðrétt (Io) : 20A

Spenna - Fram (Vf) (Max) @ Ef : 950mV @ 20A

Hraði : Fast Recovery =< 500ns, > 200mA (Io)

Afturheimtur bata (trr) : 35ns

Núverandi - Aftur leki @ Vr : 10µA @ 100V

Capacitance @ Vr, F : 300pF @ 10V, 1MHz

Festingargerð : Stud Mount

Pakki / mál : DO-203AA, DO-4, Stud

Birgir tæki pakki : DO-203AA

Rekstrarhiti - mótum : -65°C ~ 175°C

Þú gætir líka haft áhuga á

C2D05120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 17.5A TO252.
VS-20ETF04FPPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 20A TO220FP.
BAT54WH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 200MA SOT323.
IDB23E60ATMA1

Infineon Technologies

DIODE GEN PURP 600V 41A TO263-3.
IDB12E120ATMA1

Infineon Technologies

DIODE GEN PURP 1.2KV 28A TO263-3.
IDB45E60ATMA1

Infineon Technologies

DIODE GEN PURP 600V 71A TO263-3.