Vishay Semiconductor Diodes Division - BYG23T-M3/TR

KEY Part #: K6457002

BYG23T-M3/TR Verðlagning (USD) [519967stk lager]

  • 1 pcs$0.07113
  • 1,800 pcs$0.06623
  • 3,600 pcs$0.06071
  • 5,400 pcs$0.05703
  • 12,600 pcs$0.05335

Hlutanúmer:
BYG23T-M3/TR
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE AVALANCHE 1300V 1A DO214AC. Rectifiers 1A 1300V High Volt Ultrafast
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - sérstök tilgangur, Díóða - breytileg getu, Transistors - FETs, MOSFETs - Single and Díóða - leiðréttingar - fylki ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division BYG23T-M3/TR electronic components. BYG23T-M3/TR can be shipped within 24 hours after order. If you have any demands for BYG23T-M3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG23T-M3/TR Vörueiginleikar

Hlutanúmer : BYG23T-M3/TR
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE AVALANCHE 1300V 1A DO214AC
Röð : -
Hluti staða : Active
Díóða gerð : Avalanche
Spenna - DC snúningur (Vr) (Max) : 1300V
Núverandi - meðaltal leiðrétt (Io) : 1A (DC)
Spenna - Fram (Vf) (Max) @ Ef : 1.9V @ 1A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 75ns
Núverandi - Aftur leki @ Vr : 5µA @ 1300V
Capacitance @ Vr, F : 9pF @ 4V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : DO-214AC, SMA
Birgir tæki pakki : DO-214AC (SMA)
Rekstrarhiti - mótum : -55°C ~ 150°C

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