VS-GB100LP120N Verðlagning (USD) [1197stk lager]
- 1 pcs$36.16500
- 24 pcs$34.44288
- Hlutanúmer:
- VS-GB100LP120N
- Framleiðandi:
- Vishay Semiconductor Diodes Division
- Nákvæm lýsing:
- IGBT 1200V 200A 658W INT-A-PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Thyristors - SCRs - mát, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - Single, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Semiconductor Diodes Division VS-GB100LP120N electronic components. VS-GB100LP120N can be shipped within 24 hours after order. If you have any demands for VS-GB100LP120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB100LP120N Vörueiginleikar
Hlutanúmer :
VS-GB100LP120N
Framleiðandi :
Vishay Semiconductor Diodes Division
Lýsing :
IGBT 1200V 200A 658W INT-A-PAK
Röð :
-
Hluti staða :
Active
IGBT gerð :
-
Stillingar :
Single
Spenna - sundurliðun útsendara (hámark) :
1200V
Núverandi - Safnari (Ic) (Max) :
200A
Afl - Max :
658W
Vce (on) (Max) @ Vge, Ic :
1.8V @ 15V, 100A (Typ)
Núverandi - Úrskurður safnara (Max) :
1mA
Inntaksrýmd (Cies) @ Vce :
7.43nF @ 25V
Inntak :
Standard
NTC Thermistor :
No
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Chassis Mount
Pakki / mál :
INT-A-Pak
Birgir tæki pakki :
INT-A-PAK
Nýjustu fréttir
Þú gætir líka haft áhuga á
-
VS-ETL015Y120H
Vishay Semiconductor Diodes Division
IGBT 1200V 22A 89W EMIPAK-2B. Rectifiers 15A Dbl Interleaved Boost Converter
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