Vishay Semiconductor Diodes Division - VS-GB100LP120N

KEY Part #: K6533277

VS-GB100LP120N Verðlagning (USD) [1197stk lager]

  • 1 pcs$36.16500
  • 24 pcs$34.44288

Hlutanúmer:
VS-GB100LP120N
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
IGBT 1200V 200A 658W INT-A-PAK.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Kerfisstjóratæki, Díóða - Zener - Fylki, Transistors - sérstök tilgangur, Díóða - leiðréttingar - stakir, Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division VS-GB100LP120N electronic components. VS-GB100LP120N can be shipped within 24 hours after order. If you have any demands for VS-GB100LP120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100LP120N Vörueiginleikar

Hlutanúmer : VS-GB100LP120N
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : IGBT 1200V 200A 658W INT-A-PAK
Röð : -
Hluti staða : Active
IGBT gerð : -
Stillingar : Single
Spenna - sundurliðun útsendara (hámark) : 1200V
Núverandi - Safnari (Ic) (Max) : 200A
Afl - Max : 658W
Vce (on) (Max) @ Vge, Ic : 1.8V @ 15V, 100A (Typ)
Núverandi - Úrskurður safnara (Max) : 1mA
Inntaksrýmd (Cies) @ Vce : 7.43nF @ 25V
Inntak : Standard
NTC Thermistor : No
Vinnuhitastig : -40°C ~ 150°C (TJ)
Festingargerð : Chassis Mount
Pakki / mál : INT-A-Pak
Birgir tæki pakki : INT-A-PAK

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