TPAR3J S1G Verðlagning (USD) [386323stk lager]
- 1 pcs$0.09574
- Hlutanúmer:
- TPAR3J S1G
- Framleiðandi:
- Taiwan Semiconductor Corporation
- Nákvæm lýsing:
- DIODE AVALANCHE 600V 3A TO277A. Rectifiers 95ns, 3A, 600V, Fast Recovery Rectifier
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Díóða - leiðréttingar - fylki, Transistors - FETs, MOSFETs - Single, Díóða - leiðréttingar - stakir, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - RF, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in Taiwan Semiconductor Corporation TPAR3J S1G electronic components. TPAR3J S1G can be shipped within 24 hours after order. If you have any demands for TPAR3J S1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPAR3J S1G Vörueiginleikar
Hlutanúmer :
TPAR3J S1G
Framleiðandi :
Taiwan Semiconductor Corporation
Lýsing :
DIODE AVALANCHE 600V 3A TO277A
Röð :
-
Hluti staða :
Active
Díóða gerð :
Avalanche
Spenna - DC snúningur (Vr) (Max) :
600V
Núverandi - meðaltal leiðrétt (Io) :
3A
Spenna - Fram (Vf) (Max) @ Ef :
1.55V @ 3A
Hraði :
Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) :
120ns
Núverandi - Aftur leki @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
58pF @ 4V, 1MHz
Festingargerð :
Surface Mount
Pakki / mál :
TO-277, 3-PowerDFN
Birgir tæki pakki :
TO-277A (SMPC)
Rekstrarhiti - mótum :
-55°C ~ 175°C
Nýjustu fréttir
Þú gætir líka haft áhuga á
-
BYM11-200-E3/96
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO213AB. Rectifiers 1.0 Amp 200 Volt
-
-
-
-
-
BYM13-20-E3/96
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 20V 1A DO213AB. Schottky Diodes & Rectifiers 1.0 Amp 20 Volt 30 Amp IFSM
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