Vishay Semiconductor Diodes Division - NSB8KT-E3/81

KEY Part #: K6437416

NSB8KT-E3/81 Verðlagning (USD) [143207stk lager]

  • 1 pcs$0.25828
  • 800 pcs$0.24191

Hlutanúmer:
NSB8KT-E3/81
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 800V 8A TO263AB. Rectifiers 800 Volt 8.0 Amp 125 Amp IFSM
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - RF, Transistors - JFETs, Díóða - breytileg getu, Smára - tvíhverfa (BJT) - fylki and Transistors - FETs, MOSFETs - Arrays ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division NSB8KT-E3/81 electronic components. NSB8KT-E3/81 can be shipped within 24 hours after order. If you have any demands for NSB8KT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSB8KT-E3/81 Vörueiginleikar

Hlutanúmer : NSB8KT-E3/81
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 800V 8A TO263AB
Röð : -
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 800V
Núverandi - meðaltal leiðrétt (Io) : 8A
Spenna - Fram (Vf) (Max) @ Ef : 1.1V @ 8A
Hraði : Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) : -
Núverandi - Aftur leki @ Vr : 10µA @ 800V
Capacitance @ Vr, F : 55pF @ 4V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki : TO-263AB
Rekstrarhiti - mótum : -55°C ~ 150°C

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