Framleiðandi :
STMicroelectronics
Lýsing :
MOSFET N-CH 1.2KV TO247-3
Tækni :
SiCFET (Silicon Carbide)
Afrennsli að uppspennu (Vdss) :
1200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
65A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
69 mOhm @ 40A, 20V
Vgs (th) (Max) @ kt :
3V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
122nC @ 20V
Vgs (hámark) :
+25V, -10V
Inntaksrýmd (Ciss) (Max) @ Vds :
1900pF @ 400V
Dreifing orku (Max) :
318W (Tc)
Vinnuhitastig :
-55°C ~ 200°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
HiP247™