Vishay Semiconductor Diodes Division - FES8JT-5410HE3/45

KEY Part #: K6445930

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    Hlutanúmer:
    FES8JT-5410HE3/45
    Framleiðandi:
    Vishay Semiconductor Diodes Division
    Nákvæm lýsing:
    DIODE ARRAY GP TO220AC.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Transistors - sérstök tilgangur, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Transistors - Forritanleg sameining, Díóða - breytileg getu and Smára - tvíhverfa (BJT) - fylki ...
    Samkeppnisforskot:
    We specialize in Vishay Semiconductor Diodes Division FES8JT-5410HE3/45 electronic components. FES8JT-5410HE3/45 can be shipped within 24 hours after order. If you have any demands for FES8JT-5410HE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FES8JT-5410HE3/45 Vörueiginleikar

    Hlutanúmer : FES8JT-5410HE3/45
    Framleiðandi : Vishay Semiconductor Diodes Division
    Lýsing : DIODE ARRAY GP TO220AC
    Röð : Automotive, AEC-Q101
    Hluti staða : Obsolete
    Díóða gerð : Standard
    Spenna - DC snúningur (Vr) (Max) : 600V
    Núverandi - meðaltal leiðrétt (Io) : 8A
    Spenna - Fram (Vf) (Max) @ Ef : 1.5V @ 8A
    Hraði : Fast Recovery =< 500ns, > 200mA (Io)
    Afturheimtur bata (trr) : 50ns
    Núverandi - Aftur leki @ Vr : 10µA @ 600V
    Capacitance @ Vr, F : 50pF @ 4V, 1MHz
    Festingargerð : Through Hole
    Pakki / mál : TO-220-2
    Birgir tæki pakki : TO-220AC
    Rekstrarhiti - mótum : -55°C ~ 150°C

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