HGTP10N120BN Verðlagning (USD) [52422stk lager]
- 1 pcs$0.74960
- 800 pcs$0.74587
- Hlutanúmer:
- HGTP10N120BN
- Framleiðandi:
- ON Semiconductor
- Nákvæm lýsing:
- IGBT 1200V 35A 298W TO220AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - IGBTs - Single, Díóða - Zener - Fylki, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Arrays, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - FETs, MOSFETs - RF ...
- Samkeppnisforskot:
- We specialize in ON Semiconductor HGTP10N120BN electronic components. HGTP10N120BN can be shipped within 24 hours after order. If you have any demands for HGTP10N120BN, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTP10N120BN Vörueiginleikar
Hlutanúmer :
HGTP10N120BN
Framleiðandi :
ON Semiconductor
Lýsing :
IGBT 1200V 35A 298W TO220AB
Röð :
-
Hluti staða :
Not For New Designs
IGBT gerð :
NPT
Spenna - sundurliðun útsendara (hámark) :
1200V
Núverandi - Safnari (Ic) (Max) :
35A
Núverandi - Safnari púlsaður (Icm) :
80A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Afl - Max :
298W
Skiptir um orku :
320µJ (on), 800µJ (off)
Gerð innsláttar :
Standard
Hliðargjald :
100nC
Td (kveikt / slökkt) @ 25 ° C :
23ns/165ns
Próf ástand :
960V, 10A, 10 Ohm, 15V
Afturheimtur bata (trr) :
-
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Pakki / mál :
TO-220-3
Birgir tæki pakki :
TO-220-3
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