[12697stk lager]
- Hlutanúmer:
- IRF3205L
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 55V 110A TO-262.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Transistors - JFETs, Transistors - sérstök tilgangur, Smára - tvíhverfa (BJT) - fylki, Díóða - breytileg getu, Díóða - RF, Transistors - IGBTs - mát and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF3205L electronic components. IRF3205L can be shipped within 24 hours after order. If you have any demands for IRF3205L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF3205L Vörueiginleikar
Hlutanúmer :
IRF3205L
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 55V 110A TO-262
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
55V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
110A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8 mOhm @ 62A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
146nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3247pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
200W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-262
Pakki / mál :
TO-262-3 Long Leads, I²Pak, TO-262AA
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