IGD01N120H2BUMA1 Verðlagning (USD) [151151stk lager]
- 1 pcs$0.24470
- 2,500 pcs$0.21075
- Hlutanúmer:
- IGD01N120H2BUMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- IGBT 1200V 3.2A 28W TO252-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - RF, Transistors - FETs, MOSFETs - Single, Díóða - RF, Díóða - leiðréttingar - fylki, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IGD01N120H2BUMA1 electronic components. IGD01N120H2BUMA1 can be shipped within 24 hours after order. If you have any demands for IGD01N120H2BUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGD01N120H2BUMA1 Vörueiginleikar
Hlutanúmer :
IGD01N120H2BUMA1
Framleiðandi :
Infineon Technologies
Lýsing :
IGBT 1200V 3.2A 28W TO252-3
Röð :
-
Hluti staða :
Not For New Designs
IGBT gerð :
-
Spenna - sundurliðun útsendara (hámark) :
1200V
Núverandi - Safnari (Ic) (Max) :
3.2A
Núverandi - Safnari púlsaður (Icm) :
3.5A
Vce (on) (Max) @ Vge, Ic :
2.8V @ 15V, 1A
Afl - Max :
28W
Skiptir um orku :
140µJ
Gerð innsláttar :
Standard
Hliðargjald :
8.6nC
Td (kveikt / slökkt) @ 25 ° C :
13ns/370ns
Próf ástand :
800V, 1A, 241 Ohm, 15V
Afturheimtur bata (trr) :
-
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
Birgir tæki pakki :
PG-TO252-3
Nýjustu fréttir
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