NS8JTHE3_A/P Verðlagning (USD) [3177stk lager]
- 1,000 pcs$0.26162
- Hlutanúmer:
- NS8JTHE3_A/P
- Framleiðandi:
- Vishay Semiconductor Diodes Division
- Nákvæm lýsing:
- DIODE GEN PURP 600V 8A TO220AC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Single, Transistors - Forritanleg sameining, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCR and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Vishay Semiconductor Diodes Division NS8JTHE3_A/P electronic components. NS8JTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NS8JTHE3_A/P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NS8JTHE3_A/P Vörueiginleikar
Hlutanúmer :
NS8JTHE3_A/P
Framleiðandi :
Vishay Semiconductor Diodes Division
Lýsing :
DIODE GEN PURP 600V 8A TO220AC
Röð :
Automotive, AEC-Q101
Hluti staða :
Obsolete
Díóða gerð :
Standard
Spenna - DC snúningur (Vr) (Max) :
600V
Núverandi - meðaltal leiðrétt (Io) :
8A
Spenna - Fram (Vf) (Max) @ Ef :
1.1V @ 8A
Hraði :
Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) :
-
Núverandi - Aftur leki @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
55pF @ 4V, 1MHz
Festingargerð :
Through Hole
Pakki / mál :
TO-220-2
Birgir tæki pakki :
TO-220AC
Rekstrarhiti - mótum :
-55°C ~ 150°C
Nýjustu fréttir
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