[745stk lager]
- Hlutanúmer:
- IRF6710S2TR1PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 25V 12A DIRECTFET.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Kerfisstjóratæki, Thyristors - SCR, Transistors - IGBTs - Single, Díóða - Zener - Stakur, Transistors - Tvíhverfur (BJT) - Single, Transistors - FETs, MOSFETs - Arrays and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF6710S2TR1PBF electronic components. IRF6710S2TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6710S2TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6710S2TR1PBF Vörueiginleikar
Hlutanúmer :
IRF6710S2TR1PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 25V 12A DIRECTFET
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Ta), 37A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.9 mOhm @ 12A, 10V
Vgs (th) (Max) @ kt :
2.4V @ 25µA
Hliðargjald (Qg) (Max) @ Vgs :
13nC @ 4.5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1190pF @ 13V
FET lögun :
-
Dreifing orku (Max) :
1.8W (Ta), 15W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
DIRECTFET S1
Pakki / mál :
DirectFET™ Isometric S1
Nýjustu fréttir
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