Hlutanúmer :
RN1130MFV,L3F
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
TRANS PREBIAS NPN 0.15W VESM
Transistor Type :
NPN - Pre-Biased
Núverandi - Safnari (Ic) (Max) :
100mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
100 kOhms
Viðnám - Emitter Base (R2) :
100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Núverandi - Úrskurður safnara (Max) :
500nA
Tíðni - umskipti :
250MHz
Festingargerð :
Surface Mount