Toshiba Semiconductor and Storage - RN1971FE(TE85L,F)

KEY Part #: K6529771

[2054stk lager]


    Hlutanúmer:
    RN1971FE(TE85L,F)
    Framleiðandi:
    Toshiba Semiconductor and Storage
    Nákvæm lýsing:
    TRANS 2NPN PREBIAS 0.1W ES6.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - Arrays, Díóða - leiðréttingar - stakir, Transistors - JFETs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - DIACs, SIDACs and Transistors - Tvíhverfur (BJT) - Single ...
    Samkeppnisforskot:
    We specialize in Toshiba Semiconductor and Storage RN1971FE(TE85L,F) electronic components. RN1971FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1971FE(TE85L,F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN1971FE(TE85L,F) Vörueiginleikar

    Hlutanúmer : RN1971FE(TE85L,F)
    Framleiðandi : Toshiba Semiconductor and Storage
    Lýsing : TRANS 2NPN PREBIAS 0.1W ES6
    Röð : -
    Hluti staða : Obsolete
    Transistor Type : 2 NPN - Pre-Biased (Dual)
    Núverandi - Safnari (Ic) (Max) : 100mA
    Spenna - sundurliðun útsendara (hámark) : 50V
    Viðnám - stöð (R1) : 10 kOhms
    Viðnám - Emitter Base (R2) : -
    DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
    Núverandi - Úrskurður safnara (Max) : 100nA (ICBO)
    Tíðni - umskipti : 250MHz
    Afl - Max : 100mW
    Festingargerð : Surface Mount
    Pakki / mál : SOT-563, SOT-666
    Birgir tæki pakki : ES6

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