Infineon Technologies - DF200R12PT4B6BOSA1

KEY Part #: K6534172

DF200R12PT4B6BOSA1 Verðlagning (USD) [505stk lager]

  • 1 pcs$91.86184

Hlutanúmer:
DF200R12PT4B6BOSA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
IGBT MODULE VCES 1200V 200A.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - RF, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - Arrays, Díóða - RF and Thyristors - DIACs, SIDACs ...
Samkeppnisforskot:
We specialize in Infineon Technologies DF200R12PT4B6BOSA1 electronic components. DF200R12PT4B6BOSA1 can be shipped within 24 hours after order. If you have any demands for DF200R12PT4B6BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF200R12PT4B6BOSA1 Vörueiginleikar

Hlutanúmer : DF200R12PT4B6BOSA1
Framleiðandi : Infineon Technologies
Lýsing : IGBT MODULE VCES 1200V 200A
Röð : -
Hluti staða : Active
IGBT gerð : Trench Field Stop
Stillingar : Three Phase Inverter
Spenna - sundurliðun útsendara (hámark) : 1200V
Núverandi - Safnari (Ic) (Max) : 300A
Afl - Max : 1100W
Vce (on) (Max) @ Vge, Ic : 2.1V @ 15V, 200A
Núverandi - Úrskurður safnara (Max) : 15µA
Inntaksrýmd (Cies) @ Vce : 12.5nF @ 25V
Inntak : Standard
NTC Thermistor : Yes
Vinnuhitastig : -40°C ~ 150°C
Festingargerð : Chassis Mount
Pakki / mál : Module
Birgir tæki pakki : Module