Vishay Semiconductor Diodes Division - BYWB29-50-E3/45

KEY Part #: K6456550

BYWB29-50-E3/45 Verðlagning (USD) [133641stk lager]

  • 1 pcs$0.27677
  • 1,000 pcs$0.25197

Hlutanúmer:
BYWB29-50-E3/45
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 50V 8A TO263AB.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Díóða - Zener - Stakur, Thyristors - DIACs, SIDACs, Transistors - sérstök tilgangur, Transistors - IGBTs - mát, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single and Transistors - JFETs ...
Samkeppnisforskot:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYWB29-50-E3/45 Vörueiginleikar

Hlutanúmer : BYWB29-50-E3/45
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 50V 8A TO263AB
Röð : -
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 50V
Núverandi - meðaltal leiðrétt (Io) : 8A
Spenna - Fram (Vf) (Max) @ Ef : 1.3V @ 20A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 25ns
Núverandi - Aftur leki @ Vr : 10µA @ 50V
Capacitance @ Vr, F : -
Festingargerð : Surface Mount
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki : TO-263AB
Rekstrarhiti - mótum : -65°C ~ 150°C

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