Vishay Semiconductor Diodes Division - EGP31B-E3/C

KEY Part #: K6440158

EGP31B-E3/C Verðlagning (USD) [247410stk lager]

  • 1 pcs$0.14950

Hlutanúmer:
EGP31B-E3/C
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 100V 3A DO201AD. Rectifiers 3A,100V,50NS
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - JFETs, Transistors - IGBTs - Arrays, Díóða - Bríta leiðréttingar, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Tvíhverfur (BJT) - RF and Transistors - FETs, MOSFETs - Single ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division EGP31B-E3/C electronic components. EGP31B-E3/C can be shipped within 24 hours after order. If you have any demands for EGP31B-E3/C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGP31B-E3/C Vörueiginleikar

Hlutanúmer : EGP31B-E3/C
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 100V 3A DO201AD
Röð : SUPERECTIFIER®
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 100V
Núverandi - meðaltal leiðrétt (Io) : 3A
Spenna - Fram (Vf) (Max) @ Ef : 950mV @ 3A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 50ns
Núverandi - Aftur leki @ Vr : 1µA @ 100V
Capacitance @ Vr, F : 117pF @ 4V, 1MHz
Festingargerð : Through Hole
Pakki / mál : DO-201AD, Axial
Birgir tæki pakki : DO-201AD
Rekstrarhiti - mótum : -65°C ~ 175°C

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